Equipment - Physics Facility
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PHYSICS |
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RAITH150 E-Beam Llithography System
Description: The RAITH150 is a multipurpose tool capable of direct e-beam exposure, wafer scale process development at suboptical resolution. The system includes integrated linewidth and metrology functions which give the user the ability to optimize process reproducibility
Features:
- Filament type Schottky Thermal Field Emission
- Acceleration voltage 200 eV - 30 KeV
- Probe current range 4 pA - 10 nA
- Writing field size variable 1 µm - 800 µm
- Exposure step size Write Field/ 65536
- Writing speed:
- -10 MHz area mode, 2 ns resolution
- - 5 MHz random pixel addressing
- Working distance Variable 2 - 12 mm
- Automated load lock,height sensing
- Laser interferometer 2 nm resolution (0.5 nm optional)
- Current stability < 0.5 % per hour
- Sample holders available Wafer: 4“
- Universal sample for small pieces and wafers
- Module with motorized rotation and tilt function for inspection
- Beam size:
- -3.0 nm at 1kV and 30 micron aperture
- -1.5 nm at 20 kV and 30 micron aperture
- Beam position drift: 74 nm/h maximum
- Beam current drift: below 0.8% /18 hours
- Minimum grating periodicity achieved (exposure carried out
at 20 kV ):
- - 70.3 nm with a 31.3 nm line width;
- Minimum feature size reached: 17.6 nm
- Stitching accuracy in 100 micrometer write field (exposure
carried out at 10 kV):
- [mean]+3 sigma= 31.5 nm
- Overlay accuracy in 100 micrometer write field:
- [mean]+3 sigma = 34.5 nm
