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Tim Anderson
- Our current research efforts are largely devoted to the study of advanced electronic, photonic, and composite materials processing issues. Of particular interest is understanding of the fundamentals of chemical vapor deposition of thin films. We are using gas phase Raman spectroscopy and mass spectrometry, coupled with reactor modelling, to understand homogeneous thermal decomposition mechanisms of organometallic precursors. In addition, we are examining the initial stages of epitaxy and developing methods to grow heterostructures with layer abruptness at the atomic level. The group also has an interest in the growth of wide bandgap semiconductors (ZnCdSSe, AlGaN, AlGaInP), in which it is difficult to achieve significant dopant concentrations. Novel prebonded dopant precursors as well as alternative growth schemes (laser assisted, flow modulation) are being investigated as methods to increase the free carrier concentrations. Modulation-doped structures for improved thin film electroluminescent displays are being modelled, fabricated, and tested in collaboration with an industry group.

 
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